Exploring the optoelectronic properties of medium-wave dual-color detectors based on asymmetric InAs/InAsSb superlattice niBin structure
Wenya Huang, Shuai Yang, Yilun Yu, Beituo Liu, Rui Ge, Changsheng Xia, Fangyu Yue. Infrared Physics & Technology,Volume 145,2025,105708,ISSN 1350-4495.
Design of electron blocking layer and its influence on the radial hole transport in GaN-based vertical cavity surface emitting laser diodes
Yachen Wang, Feng Liang, Jing Yang, Ping Chen, Changsheng Xia, and Degang Zhao. Opt. Express 32, 42929-42937 (2024).
Numerical modeling for 250 nm DUV LEDs with discrete p-type functional layers to manage both carrier and photon transport
Li, W. , Liu, Z. , Chu, C. , Tian, K. , Liu, H. , & Zhang, Y. , et al. [J].IEEE Journal of Quantum Electronics, 60.DOI:10.1109/JQE.2024.3478089.
Enhanced characteristics in AlGaN-based deep ultraviolet light-emitting diodes with interval-graded barrier superlattice electron blocking layers
Z. A. Jiang，Y. H. Zhu*，C. S. Xia*, Y. Sheng，Y. Li, Micro and Nanostructures, 191, 207869 (2024).
Exploring the optical property of InAs1−xSbx-based nBn structures for high-temperature mid-wave infrared detection
W. Y. Huang, S. Yang, J. Hong, C. S. Xia, and F. Y. Yue, Applied Physics Letters, 124, 183501 (2024).
Performance improvement of GaN-based vertical cavity surface emitting laser by employing a hole storage layer and enhancing the carrier transport behavior
Y. C. Wang, F. Liang , J. Yang, P. Chen , Z. S. Liu , C. S. Xia, and D. G. Zhao, Results in Physics, 60, 107690 (2024).
2.5 kV/1.95 GW/cm AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current
Z. Z. Wang, F. P. Huang, C. S. Chu, K. K. Tian, H. H. Gong, N. Sun, Y. H. Zhang, Y. J. Li, J. D. Ye, Z. H. Zhang, IEEE Transactions on Electron Devices, 71, 3811-3817 (2024)
Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes
J. Y. Yang, K. K. Tian, C. S. Chu, Y. H. Zhang, K. Jiang, X. J. Sun, D. B. Li, X. W. Sun, Z. H. Zhang, Advanced Electronic Materials, 2400247 (2024)
Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes
X. C. Gao, H. Feng, F. P. Huang, Z. Z. Yang, C. S. Chu, K. K. Tian, Y. H. Zhang, Z. H. Zhang, Japanese Journal of Applied Physics, 63, 054003 (2024)
Is it possible to make thin p-GaN layer for AlGaN-based deep ultraviolet micro light emitting diodes?
Y. F. Chen, C. S. Chu, T. J, Y. J, K. K. Tian, Y. H. Zhang, Z. H. Zhang, IEEE Electron Device Letters, 45, 316-319 (2024)
Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate
Y. Li, C. S. Chu, X. Zhan, Z. J. Zhu, K. K. Tian, Y. H. Zhang, Z. H. Zhang, X. W. Sun, Applied Optics, 63, 5184-5191 (2024)
Polarization-doped npipn GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity
Z. J. Zhu, C. S. Chu, K. K. Tian, X. Zhan, Z. W. Xie, K. J, Y. H. Zhang, X. J. Sun, Z. H. Zhang, D. B. Li, Semiconductor Science and Technology, 39, 035005 (2024)